PLANO, Texas--(BUSINESS WIRE)--Oct. 6, 2015-- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the DMN3027LFG 30V N-channel MOSFET. This device is designed as a switch to rapidly and safely discharge large bulk capacitors used on FPGA power rails. The latest FPGAs found in telecoms equipment, servers and data centers have multiple power rails that need to be correctly sequenced to safely power these systems up and down. Designers of high-reliability DC-DC power supplies can achieve this quickly and easily with this new MOSFET from Diodes.
The DMN3027LFG has an RDS(on) of 26mΩ at 4.5V, which is low enough to discharge a 15mF capacitor in <10ms but not so low that sharply rising current peaks could cause EMI issues or give rise to transient thermal stresses, potentially damaging the MOSFET or capacitor bank. Under the typical FPGA low-voltage rail conditions of 1V, this current is self-limited by the MOSFET channel resistance as specified in the safe operating area (SOA). This SOA is given at a +60°C ambient temperature with minimal heat-sinking to support the typical application conditions, allowing peak currents up to 20A to be safely handled in <10ms.
The DMN3027LFG is offered in a PowerDI®3333 package, which has a low thermal resistance from junction to exposed pad of <10°C/W enabling the dissipation of up to 3W. For further information, visit the Company’s website at www.diodes.com.
PowerDI is a registered trademark of Diodes Incorporated.
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two additional facilities located in Shanghai, China. Diodes has assembly and test facilities located in Shanghai and in Chengdu, China, as well as in Neuhaus and in Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes’ website at www.diodes.com.
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Source: Diodes Incorporated
Company Contact:
Diodes Incorporated
Francis Tang, 972-987-3900
VP, Worldwide Discrete Products
pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers, 949-224-3874
EVP, Investor Relations
lsievers@sheltongroup.com
