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7-Channel DMOS Transistor Array from Diodes Incorporated Drives Inductive Loads While Dissipating Minimal Power
Fabricated with DMOSFET output transistors, the ULN62003A has an output voltage drop of just 0.2V. This is far lower than the bipolar devices with which it is pin-compatible. The resulting power dissipation reduction not only minimizes overall power usage but also mitigates thermal issues and improves reliability. It also allows more devices to be controlled while still maintaining the desired die temperature.
In addition, the device, with its support for input voltages down to -1V, has much greater flexibility and allows the GND pin to be used for detecting overcurrent situations. This capability further increases system robustness and broadens the applications that the ULN62003A can address. Clamping diodes are included on each of this transistor array’s outputs for protection and improved reliability when driving inductive loads.
The ULN62003A is supplied in a SO-16 package and offers a superior performance to many popular peripheral driver devices. It is available at
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