PLANO, Texas--(BUSINESS WIRE)--Jul. 24, 2013-- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced a family of its Super Barrier Rectifiers (SBR®) qualified to the AECQ101 high-reliability automotive standard and backed by PPAP level 3 documentation. The parts are 100% avalanche tested and proven to deliver a reverse-avalanche capability of between three to ten times greater than competing Schottky alternatives.
Due to the SBR’s unique patented structure, its high-reverse avalanche performance ensures greater guardbanding against negative spikes and inductive load surges, thereby raising the ruggedness and reliability of automotive products. In a typical single-pulse avalanche test, avalanche energy measurements for Schottky and SBR devices were respectively 7mJ and 70mJ for the same circuit conditions.
Offering current ratings up to 60A and reverse voltage ratings up to 100V, the SBR ‘Q’ portfolio is also characterized by significantly lower reverse leakage current at higher temperatures, helping to minimize circuit losses and increasing protection against thermal runaway.
The SBR forward voltage drop is also lower than that of the Schottky, meaning conduction losses are less and overall efficiency is improved in common reverse-polarity protection and freewheeling diode circuits, for example. For a full list of Diodes’ SBR automotive-qualified parts, visit the Company’s website at www.diodes.com/sbr_auto.
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters, logistics center, and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two more located in Shanghai, China. In addition, two assembly-test facilities are located in Shanghai; two are located in Chengdu, China, with one in Neuhaus and one in Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Fort Worth, Texas; Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; Suwon, South Korea; Tokyo, Japan; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes’ website at http://www.diodes.com.
Source: Diodes Incorporated
Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com
