DFN1212-3 Packaged Parts are Drop-in Replacement for SOT723 Alternatives

PLANO, Texas--(BUSINESS WIRE)--Dec. 1, 2011-- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280ºC/W.

Occupying the exact same 1.44mm² printed circuit board area and with the same low profile 0.5mm off-board height as the less thermally efficient SOT723 packaged MOSFETs, these leadless DFN1212-3 packaged alternatives are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portability consumer electronics products including digital cameras, tablet PCs and smartphones.

The MOSFET pair initially released by Diodes Incorporated are 20V rated and comprise the DMN2300UFD N-channel and the DMP21D0UFD P-channel parts. Helping to dramatically reduce conduction losses and power dissipation, the N-channel MOSFET presents a typical R_DS(ON) of just 400mΩ at V_GS of 1.8V, which is approximately 50% lower than the most popular SOT723 packaged alternatives. For further information, visit the Company’s website at www.diodes.com.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and two joint venture facilities located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Fort Worth, Texas; Taipei; Hong Kong; Manchester; and Munich, Germany, with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at http://www.diodes.com.

Source: Diodes Incorporated

Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com