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Diodes Incorporated's High Current Gate Driver Minimizes Switching Losses

Jan 11, 2011

DALLAS, Jan 11, 2011 (BUSINESS WIRE) -- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today has announced the ZXGD3005E6 10 Amp gate driver. The device has been designed to ensure ultra fast switching of power MOSFET and IGBT loads in power supply, solar inverter and motor drive circuits. With its emitter follower configuration delivering propagation delay times of less than 10ns and rise and fall times of less than 20ns, this non inverting gate driver will reduce switching losses, simplify circuit design and improve overall system reliability.

Having separate source and sink outputs, the ZXGD3005E6 enables independent control of the rise and fall times, allowing designers to achieve their preferred switching characteristics. The device's wide supply voltage range of 25V allows full enhancement of target MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltage to be applied to prevent false triggering of IGBTs.

Able to provide typically 4A output current from only 1mA input current, this high-gain, high-speed gate driver acts as a perfect interface between a controller IC and the load switch that does not require additional buffering stages. The need for added circuitry is further reduced by the ZXGD3005E6's rugged design, which makes it inherently resistant to issues of latch-up and shoot-through.

The gate driver is provided in a space-saving low profile SOT26 package with an optimized pin-out that simplifies PCB layout and helps reduce the parasitic inductance of traces. For further information visit www.diodes.com.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Dallas, Texas. Design, marketing, and engineering centers are located in Dallas; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; and Munich, Germany; with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at www.diodes.com.

SOURCE: Diodes Incorporated

Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-385-2810
E: pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com