PLANO, Texas, May 10, 2011 (BUSINESS WIRE) -- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today announced a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm² of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and, with a junction to ambient thermal resistance (Rthj-a) of 256 C/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.

The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm make them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Initially Diodes is offering both n-channel and p-channel devices with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.

The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150m, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs are also high, at 2kV and 3kV, respectively. For further information visit www.diodes.com

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; and Munich, Germany; with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at www.diodes.com.

SOURCE: Diodes Incorporated

Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com