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Miniature Automotive MOSFETs from Diodes Incorporated Deliver Increased Power Density
The DMTH4008LFDFWQ has a typical RDS(ON) of 11.5mΩ at VGS = 10V and a gate charge, Qg, of just 14.2nC. The DMTH6016LFDFWQ has a typical RDS(ON) of 13.8mΩ at VGS = 10V and a Qg of 15.2nC. Similarly, both devices are qualified to 175°C and packaged in the sidewall plated DFN2020, making them suitable for use in high ambient temperature environments.
When used in a typical application, such as a 12V, 5A buck converter, the DMTH4008LFDFWQ dissipates 20% less power than comparable competitor MOSFETs. This significant improvement in efficiency provides automotive designers with greater flexibility and the freedom to increase power density in new or existing automotive applications.
The DMTH4008LFDFWQ and DMTH6016LFDFWQ are automotive-compliant to AEC-Q101 and supported by PPAP for full traceability.
Further information is available at www.diodes.com.
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