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100V H-bridge MOSFETs from Diodes Incorporated Reduces Footprint with 5mm x 4.5mm Package

Jan 21, 2016

PLANO, Texas--(BUSINESS WIRE)--Jan. 21, 2016-- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the DMHC10H170SFJ. This 100V full H-bridge incorporates dual N-channel and P-channel MOSFETs into a tiny (5mm x 4.5mm) DFN5045 package. This configuration reduces component count and board space, which is especially important in applications that require multiple devices, such as the array of ultrasonic transducers used for industrial inspection systems or found in marine sonar equipment. Other common applications include driving DC motors in 48V telecom fans and other inductive loads such as the coils in wireless charging pads.

The DMHC10H170SFJ has a 100V drain-source breakdown voltage (BVDSS) providing sufficient headroom to support 48V telecom rails and industrial applications, while having a 5V gate voltage to simplify designs with a direct logic level interface to MCUs. An 11A peak pulse current rating also means the device can handle the in-rush current from energizing a coil, which is usually greater than five times the typical operating current of a DC motor.

The DMHC10H170SFJ is able to replace four SOT23 or two SO-8 packages, which enables compact arrays of multiple ultrasonic transducers. An example of this is 1024 transducers each needing to be individually driven with an H-bridge, providing steerable and focused beams for phased-array systems. Such systems are used in manufacturing for material flaw inspection or in marine echo-location systems.

The DMHC10H170SFJ is supplied in a V-DFN5045-12 package, which provides a uniquely small solution for the market. For further information, visit the Company’s website at www.diodes.com.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes’ corporate headquarters and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two additional facilities located in Shanghai, China. Diodes has assembly and test facilities located in Shanghai and in Chengdu, China, as well as in Neuhaus and in Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes’ website at www.diodes.com.

Source: Diodes Incorporated

Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com