Diodes Menu Close

Press Releases

Press Release

Back to Press Room

Diodes Incorporated Releases First Product in Thermally Enhanced PowerDI(R)5060 Package

Dec 8, 2010
P-channel MOSFET Raises Reliability and Saves Space

DALLAS, Dec 08, 2010 (BUSINESS WIRE) -- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today announced the release of the Company's first device in its unique PowerDI5060 package, the DMP3010LPS 30V rated p-channel enhancement mode MOSFET, offering designers of notebooks, netbooks and other consumer electronics improvements in reliability and reductions in pcb space requirements.

With a junction to case thermal resistance (Rthj-c) of 2.1°C/W, the PowerDI5060's thermal resistance is 10 times lower than an SO8 alternative, improving on power dissipation performance, resulting in cooler running and more reliable product design. Its off-board height of 1.1mm is also 54% less than that of SO8, making it well suited for low profile applications.

With a large drain pad significantly reducing package inductance and resistance parameters, the PowerDI5060 package helps to significantly boost p-channel MOSFET performance. With the DMP3010LPS's low typical on-resistance of 7.8m at 10V VGS on-state losses are effectively minimized in load switching and battery charging duties. For more information, visit the Company's website at www.diodes.com.

PowerDI is a registered trademark of Diodes Incorporated.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Dallas, Texas. Design, marketing, and engineering centers are located in Dallas; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; and Munich, Germany; with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at www.diodes.com.

SOURCE: Diodes Incorporated

Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
972-385-2810
pressinquiries@diodes.com
or
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
949-224-3874
lsievers@sheltongroup.com